移动物料信息分布式传输方法及应用

在流程工业生产中,移动物料计量信息的传输普遍采用电台和无线模块。接收电台周围环境严重影响计量信息的传输效果,尤其是钢结构厂房、电磁干扰区内,数据传输过程中的丢包率、误码率相当严重。本文提出一种多节点分布式传输方法,根据各个生产作业区环境条件设置相应的WIFI节点数,实现对作业区的无线信号覆盖。网络覆盖区内无线模块、PDA终端(PDA)、终端查询设备通过节点工作频段和阵列天线自适应调节,实现数据传输最佳化。铜熔炼生产现场测试表明,此种传输方法可以有效消除周围环境的电磁干扰,数据丢包率低于0.1%。     

纳米氧化锌/低密度聚乙烯膜中锌向食品的迁移研究

目的研究纳米氧化锌/低密度聚乙烯膜(low density polyethylene film,LDPE)中锌(Zn)向食品的迁移行为,探究其迁移规律。方法选取2种食品模拟物(3%乙酸及超纯水)及真实食品(食用白醋及瓶装水),在3种不同实验温度下(70、40及20℃),研究锌向食品模拟物的迁移规律。采用扫描电子显微镜(scanning electron microscope,SEM)和原子力显微镜(atomic force microscope,AFM)表征纳米ZnO/LDPE膜的表面形貌。结果锌向酸性模拟物中的迁移率远远大于水性模拟物中的迁移率,其中锌向酸性模拟物中的最大迁移率分别为22.7%,20.3%及18.6%(ZL-1,ZL-2及ZL-2#),向水性模拟物中的最大迁移率分别为9.9%,5.7%及4.9%(ZL-1,ZL-2及ZL-2#);锌向酸性食品的迁移量(1.59~5.03 mg/g)同样高于向水性食品的迁移量(2.98~24.60μg/g);随着纳米ZnO的初始含量变大迁移率变小;而偶联剂的加入对锌的迁移有一定的抑制作用。随着纳米ZnO浓度的增加,在薄膜中观察到纳米ZnO的不规则形貌。结论纳米ZnO/LDPE膜不适合在高温下包装食物,且其在酸性食品中的安全隐患高于水性食品。     

Estimation of power density in IMPATT using different materials

ABSTRACT

The RF output power dissipated per unit area is calculated using Runge-Kutta method for the high-moderate-moderate-high (n⁺-n-p-p⁺) doping profile of double drift region (DDR)-based impact avalanche transit time (IMPATT) diode by taking different substrate at Ka band. Those substrates are silicon, gallium arsenide, germanium, wurtzite gallium nitride, indium phosphide and 4H-silicon carbide. A comparative study regarding power dissipation ability by the IMPATT using different material is being presented thereby modelling the DDR IMPATT diode in a one-dimensional structure. The IMPATT based on 4H-SiC element has highest power density in the order of 10¹⁰ Wm^?2 and the Si-based counterpart has lowest power density of order 10⁶ Wm^?2 throughout the Ka band. So, 4H-SiC-based IMPATT should be preferable over others for the power density preference based application. This result will be helpful to estimate the power density of the IMPATT for any doping profile and to select the proper element for the optimum design of the IMPATT as far as power density is concerned in the Ka band. Also, we have focused on variation of power density with different junction temperatures and modelled the heat sink with analysis of thermal resistances.     

Mechanism of methanol decomposition on the Pd/WC(0001) surface unveiled by first-principles calculations

In this study, the decomposition of methanol into the CO and H species on the Pd/tungsten carbide (WC)(0001) surface is systematically investigated using periodic density functional theory (DFT) calculations. The possible reaction pathways and intermediates are determined. The results reveal that saturated molecules, i.e., methanol and formaldehyde, adsorb weakly on the Pd/ WC(0001) surface. Both CO and H prefer three-fold sites, with adsorption energies of −1.51 and −2.67 eV, respectively. On the other hand, CH₃O stably binds at three-fold and bridge sites, with an adsorption energy of −2.58 eV. However, most of the other intermediates tend to adsorb to the surface with the carbon and oxygen atoms in their sp³ and hydroxyl-like configurations, respectively. Hence, the C atom of CH₂OH preferentially attaches to the top sites, CHOH and CH₂O adsorb at the bridge sites, while COH and CHO occupy the three-fold sites. The DFT calculations indicate that the rupture of the initial C–H bond promotes the decomposition of CH₃OH and CH₂OH, whereas in the case of CHOH, O–H bond scission is favored over the C–H bond rupture. Thus, the most probable methanol decomposition pathway on the Pd/WC(0001) surface is CH₃OH → CH₂OH → trans-CHOH → CHO → CO. The present study demonstrates that the synergistic effect of WC (as carrier) and Pd (as catalyst) alters the CH₃OH decomposition pathway and reduces the noble metal utilization.     

齐大山铁矿南帮含水构造带探测研究

为解决采空区突发涌水给矿山安全生产带来的安全威胁,以齐大山铁矿为研究对象,以高密度电阻率法含水构造带理论模型的正演模拟研究为基础,运用高密度电阻率法对采场南帮含水构造带的异常范围进行了圈定;运用瞬变电磁法进行了二次探测,并对高密度电阻率法所圈定的异常范围进行了验证。研究表明:含水构造带显示为低阻异常特征,在高密度电阻率法探测成果图中显示的两处低阻异常与含水构造带理论模型的正演模拟结果一致;同时,在瞬变电磁法探测成果图中显示的低阻区域均在高密度电阻率法所圈定的低阻异常范围内,二者相互验证,这两处低阻异常均为含水构造带的地球物理异常特征的显示,表明采用高密度电阻率法和瞬变电磁法组合识别技术可实现对隐伏含水构造带的先导性探测。     

含芳香氨基酸三肽及其衍生物自由基离子的形成和解离机理研究

铜-配体(L)-三肽组成的三元复合物［Cu(L)M］²⁺，其中，L表示4′-氯-2,2′:6′,2″-三联吡啶(缩写为4Cl-tpy)；M表示酪氨酰-甘氨酰-色氨酸(YGW)及其修饰型三肽(CH₃CO-YGW-OCH₃，缩写 Ac-YGW-OMe)。使用该复合物，通过碰撞诱导解离 (collision-induced dissociation, CID)产生两种自由基离子 (［YGW］^·+和［Ac-YGW-OMe］^·+)。采用串联质谱结合密度泛函理论 (density functional theory, DFT)得到气相稳定结构，并研究其气相解离行为。研究结果表明，［YGW］^·+和［Ac-YGW-OMe］^·+的气相解离行为截然不同，［YGW］^·+主要产生［M-CO₂-116］⁺和［M-CO₂］^·+碎片离子；而［Ac-YGW-OMe］^·+在气相中主要产生［M-CH₃OH］^·+碎片离子。推测这两种离子的气相裂解机理分别为：［YGW］^·+羧基上的质子重排到多肽骨架中羰基氧上，经历 C_α-C键的断裂产生［M-CO₂］^·+、断裂色氨酸侧链 C_β-C_γ键产生［M-CO₂-116］⁺离子；［Ac-YGW-OMe］^·+则先经历质子重排到酯基氧上，然后经过C-O酯键的断裂形成［M-CH₃OH］^·+离子。参与重排的质子可能有3个来源：Ac-YGW-OMe中甘氨酸的C_α-H、色氨酸的C_α-H 或C_β-H，该机理有待进一步验证。本研究将为其他类型多肽及衍生物的结构及气相反应机理研究提供参考。     

High breakdown strength and energy density in antiferroelectric PLZST ceramics with Al2O3 buffer

In this work, a new core-shell structure of antiferroelectric ceramic powder (Pb_0.97La_0.02Zr_0.85Sn_0.12Ti_0.03O₃-PLZST) coated with linear dielectric (Al₂O₃) has been successfully prepared to realize high energy density through tape-casting process. According to the experimental results of electron microscope, the sol-gel derived Al₂O₃ layer was uniformly coated on the PLZST particles and the Al₂O₃ layer can be taken as the buffer layer to effectively refine the grain growth as well. Therefore, the modified PLZST particles were fine and uniform compared with the pure PLZST. It was found that the buffer layer could undertake higher electric field and the electric field applied to PLZST particles was weakened based on finite element analysis, which can avoid the premature breakdown of PLZST. And the actual measured breakdown strength was significantly enhanced from 22.2 kV/mm to 35.5 kV/mm. Correspondingly, an extremely high recoverable energy storage density of 5.3 J/cm³ was obtained for PLZST with 0.5%wt Al₂O₃, an 204% enhancement over the pure PLZST ceramics (2.6 J/cm³), and the corresponding efficiency was up to 88.3%. In addition, impedance spectroscopy measurement was carried out to further confirm the better insulation of the ceramic with Al₂O₃ buffer.     

中频炉烧结钍钨坯条技术研究

为了解决中频炉烧结钍钨坯条密度偏低的问题，对中频炉进行了炉底、炉体、顶盖技术改造，改造后提高了工装的隔热效果，使中频炉耐热温度由2 300 ℃提高到2 800 ℃，然后进行钍钨坯条的烧结，研究了中频烧结钍钨坯条的工艺参数，结果表明：2 300 ℃烧结密度只有16.94 g?cm-3，提高烧结温度到2 800 ℃此时接近氧化钍的熔点（3 220 ℃），烧结后密度提升较大达到18.70 g?cm-3，达到后续加工要求，2 800 ℃烧结延长高温烧结时间和增加保温平台的方式对钍钨坯条的烧结密度影响不大。